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SPTS Deep Silicon Etch

eagle-i ID

http://eagle-i.itmat.upenn.edu/i/00000152-3213-3ee0-aeee-612f80000000

Resource Type

  1. Reactive ion etcher

Properties

  1. Resource Description
    With an installed base of over 1000 DRIE process modules, SPTS’ market-leading position is spearheaded by the Rapier module, which etches Si using Bosch switched processing as well as non-switched etching for tapered profiles, wafer thinning and via reveal. Advantages of SPTS Si DRIE Patented dual plasma source design with independently controlled primary and secondary decoupled plasma zones, with independent dual gas inlets. This results in a highly concentrated and uniformed distribution of radicals. High etch rate Excellent uniformity Controls tilting of deep features across the wafer Inherent multi-mode flexibility also allows complementary oxide etching within the same hardware. Delivering unparalleled process capability with world-class productivity & cost of ownership benefits, SPTS’ DRIE process modules are used in a wide variety of applications across multiple end markets. All processes at QNF are developed collaboratively with Nanofab staff, SPTS Applications and the PI group. <img src="http://www.nano.upenn.edu/wp-content/uploads/2014/09/DE-07-225x300.jpg" alt="SPTS Deep Silicon Etch">
  2. Additional Name
    SPTS Rapier Si DRIE
  3. Manufacturer
    SPP Process Technology Systems
  4. Model Number
    Si DRIE
  5. Website(s)
    http://www.nano.upenn.edu/resources/equipmentinstrumentation/
  6. Part of Collection
    Quattrone Nanofabrication Facility
  7. Location
    Singh Center for Nanotechnology (Penn)
 
RDFRDF
 
Provenance Metadata About This Resource Record
  1. workflow state
    Published
  2. contributor
    fcoldren
  3. created
    2016-01-11T14:06:15.797-05:00
  4. creator
    fcoldren
  5. modified
    2016-01-12T09:12:29.250-05:00

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