Trion Phantom

eagle-i ID

Resource Type

Properties

1. Resource Description

   The Phantom III RIE is designed to supply research and failure analysis laboratories with state-of-the-art plasma etch capability using single wafers, dies or parts using fluorine and oxygen based chemistries. The system has a compact, modular design built on a space-saving platform. The cathode and anode are each machined out of single blocks of aluminum. After critical inspection they are hard anodized for protection from process chemistries. The bottom electrode is available in 150mm size and can process single wafers, dies or parts (2″ – 150mm). Process gases are introduced into the chamber either by a showerhead manifold (BCl3, Cl2, Ar and SF6). Trion’s carefully engineered ICP is a proven option for applications requiring a downstream, high-density plasma source. It dramatically reduces radiation damage and contamination from RIE sputtering and greatly increases selectivity to other films. It allows for higher plasma densities as power is transferred into the bulk plasma via the magnetic field resultant from inductive coupling. This enables processing at lower pressure, which has a number of significant benefits. It allows for tight anisotropy in high aspect ratio structures and reduces microloading effect. Trion’s ICP source will result in improved etch rates, profile control, uniformity and selectivity with a dramatic reduction in RIE radiation damage. The Phantom III ICP comes with a 600 watt, 13.56 MHz power supply and a built-in automatic matching network. <img src="http://www.nano.upenn.edu/wp-content/uploads/2014/09/DE-05-225x300.jpg" alt="Trion Phantom">

2. Additional Name

   Phantom III Reactive Ion Etch (RIE) System

3. Manufacturer

   Trion Technology

4. Model Number

   Phantom III

5. Website(s)

   http://www.nano.upenn.edu/resources/equipmentinstrumentation/

6. Part of Collection

   Quattrone Nanofabrication Facility

7. Location

   Singh Center for Nanotechnology (Penn)